Interface Ba2
[InterfaceBa2] -> [Platform] -> [Interface] -> [Device] -> [DeviceSeries] -> [Device] -> [DeviceType] -> [Address] -> [Error] -> [Source] -> [InterfaceBa2] -> [Platform] -> [Interface]
[Header] -> [Header] -> [Header] -> [PLC] -> [Command] -> [PLC] -> [Instruction] -> [PLC] -> [FlowCommand] -> [FlowCommand] -> [Buffer] -> [Instruction] -> [FlowCommand] -> [Buffer] -> [Instruction] -> [FlowCommand]
[Header] -> [Header] -> [Header] -> [PLC] -> [Command] -> [PLC] -> [Instruction] -> [PLC] -> [FlowCommand] -> [FlowCommand] -> [Buffer] -> [Instruction] -> [FlowCommand] -> [Buffer] -> [Instruction] -> [FlowCommand] -> [FlowCommand] -> [Instruction] -> [PLC]
[Header] -> [Header] -> [Header] -> [PLC] -> [Command] -> [PLC] -> [Instruction] -> [PLC] -> [FlowCommand] -> [FlowCommand] -> [Buffer] -> [Instruction] -> [FlowCommand] -> [Buffer] -> [Instruction] -> [FlowCommand] -> [FlowCommand] -> [Instruction] -> [PLC]
[Header] -> [Header] -> [Header] -> [PLC] -> [Command] -> [PLC] -> [Instruction] -> [PLC] -> [FlowCommand] -> [FlowCommand] -> [Buffer] -> [Instruction] -> [FlowCommand] -> [Buffer] -> [Instruction] -> [FlowCommand] -> [FlowCommand] -> [Instruction] -> [PLC]
[Header] -> [Header] -> [Header] -> [PLC] -> [Command] -> [PLC] -> [Instruction] -> [PLC] -> [FlowCommand] -> [FlowCommand] -> [Buffer] -> [Instruction] -> [FlowCommand] -> [Buffer] -> [Instruction] -> [FlowCommand] -> [FlowCommand] -> [Instruction] -> [PLC]
[Header] -> [Header] -> [Header] -> [PLC] -> [Command] -> [PLC
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Internal interface depth for two temperature slices in the interior of our BaAl2x O2x + 3x model. It is important to remember that the uptake of a columnar polycrystalline sample as thin as 2.
Such interfacial separations are certainly possible for oxides with large interstitial concentrations or strong binding sites. These are often categorized as antiphase boundaries (APBs), and APBs are known to .
The evolution of the interface Ba2 + through mixing in this study is merely the result of competing equilibria.
Next, the resulting total excess Ba2 + concentration at the surface was taken to be the sum of the mean flux of Ba2 + across the interface and the remaining excess Ba2 + in the monolayer of the samples.
For a solid-state reaction the decrease in the bulk concentration of the progenitor BaO, Al2O3, CaO, MgO, and their respective oxide products (BaO, CaO, Ba2O3, Al2O3) are in equilibrium with the excess Ba2 + concentration of the reaction products in the bulk.
The hydration reaction of BaO, Al2O3, MgO was examined as an example to determine the interface Ba2 + concentration and its influence on the lattice growth of the solution reaction products.
The interface Ba2 + at t = 0 is calculated by subtraction of the excess concentration of the bulk reaction product from the total concentration of the bulk products.
Ba2+ reaction products are adsorbed at the surface and begin to replace water molecules from the surface.
If only a single interface is present, the isotherm of Ba2 + reaction products completely fills the depth of the interface.
The surface tension term is not included for simplicity. Consequently, we have a linear contribution to the interfacial tension [ 64 ].
A significant fraction of the interfacial reaction Ba2 + is influenced by the strong binding of the reaction products at the surface.
The Ba2 + reaction products are adsorbed at the surface, as is shown by the excess concentrations in the bulk reaction products.
The reaction with BaO proceeded until roughly 80% of the water had been replaced by the reaction product.
The Ba2+ reaction products are adsorbed at the surface.
We have many sites which can change occupation on the surface and the reaction products are adsorbed at these sites.
A significant fraction of the reaction products are
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