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Cleaning processes are employed to remove contaminants, such as silicon dioxide, ashing and photoresist residues, from the surface of the wafer after fin patterning. In one prior art approach, hydrofluoric acid (HF) is used for cleaning. However, the use of HF is not desirable because HF penetrates into the fins and diffuses into the buried insulator layer and the semiconductor substrate, such as a bulk silicon substrate. Fluoro-organic
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